參數(shù)資料
型號: ILB03N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: LightMOS Power Transistor
中文描述: LightMOS功率晶體管
文件頁數(shù): 9/15頁
文件大?。?/td> 330K
代理商: ILB03N60
ILA03N60, ILP03N60
ILB03N60, ILD03N60
^
Power Semiconductors
9
Rev. 1.2 Apr-04
Z
t
,
T
10μs 100μs 1ms
10ms 100ms
1s
10s
100s
10
-1
K/W
10
0
K/W
10
1
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
Z
t
,
T
t
p
,
PULSE WIDTH
t
p
,
PULSE WIDTH
Figure 18: IGBT transient thermal
impedance as a function of pulse width
(FullPak)
(
D
=
t
p
/
T
)
Figure 19: Diode transient thermal
impedance as a function of pulse width
(FullPak)
(
D
=
t
p
/
T
)
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
1s
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
Z
t
,
T
10μs
100μs
1ms
10ms
100ms
1s
10
-1
K/W
10
0
K/W
10
1
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
t
p
,
PULSE WIDTH
t
p
,
PULSE WIDTH
Figure 20: IGBT transient thermal
impedance as a function of pulse width
(Other Packages)
(
D
=
t
p
/
T
)
Figure 21: Diode transient thermal
impedance as a function of pulse width
(Other Packages)
(
D
=
t
p
/
T
)
10μs 100μs 1ms
10ms 100ms
1s
10s
100s
10
-1
K/W
10
0
K/W
10
1
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
R
,(K/W )
0.907
1.088
3.762
4.043
τ
,
(s)
4.532*10
-2
5.957*10
-3
8.797*10
-4
1.667*10
-4
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
1.186
1.856
1.458
τ
,
(s)
0.0466
2.220*10
-3
3.616*10
-4
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
1.76
2.98
0.620
0.915
τ
,
(s)
5.30
1.59
0.0719
0.00654
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
3.46
0.798
0.662
1.84
τ
,
(s)
3.99
0.368
0.00973
8.52*10
-4
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
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