參數(shù)資料
型號(hào): ILQ621GB
廠商: VISHAY INTERTECHNOLOGY INC
元件分類(lèi): 光電耦合器
英文描述: 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 417K
代理商: ILQ621GB
Document Number: 83654
www.vishay.com
Revision 17-August-01
2–202
DUAL CHANNEL
ILD621/621GB
QUAD CHANNEL
ILQ621/621GB
Multi-Channel Phototransistor
Optocoupler
FEATURES
Alternate Source to TLP621-2/-4 and
TLP621GB-2/-4
Current Transfer Ratio (CTR) at IF= 5.0 mA
ILD/Q621: 50% Min.
ILD/Q621GB: 100% Min.
Saturated Current Transfer Ratio
(CTRSAT) at IF=1.0 mA
ILD/Q621: 60% Typ.
ILD/Q621GB: 30% Min.
High Collector-Emitter Voltage, BVCEO=70 V
Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
Isolation Test Voltage from Double Molded
Package, 5300 VRMS
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ............................................. 6.0 V
Forward Current .......................................... 60 mA
Surge Current ................................................ 1.5 A
Power Dissipation...................................... 100 mW
Derate from 25
°C ................................ 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Collector Current ......................................... 50 mA
Collector Current (t <1.0 ms)...................... 100 mA
Power Dissipation...................................... 150 mW
Derate from 25
°C................................. –2.0 mW/°C
Package
Isolation Test Voltage
(t=1.0 sec.) ........................................ 5300 VRMS
Package Dissipation ILD620/GB.............. 400 mW
Derate from 25
°C............................... 5.33 mW/°C
Package Dissipation ILQ620/GB .............. 500 mW
Derate from 25
°C............................... 6.67 mW/°C
Creepage ................................................
≥7.0 mm
Clearance .................................................
≥7.0 min
Isolation Resistance
VIO=500 V, TA=25°C.............................. ≥10
12
VIO=500 V, TA=100°C............................ ≥10
11
Storage Temperature.................. –55
°C to +150°C
Operating Temperature ............... –55
°C to +100°C
Junction Temperature................................... 100
°C
Soldering Temperature
(2.0 mm from case bottom) ...................... 260
°C
V
DE
DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou-
plers that use GaAs IRLED emitters and high gain NPN silicon phototransis-
tors. These devices are constructed using over/under leadframe optical
coupling and double molded insulation technology. This assembly process
offers a withstand test voltage of 7500 VDC.
The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of
30% minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a
minimum CTRCE of 100% at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE
of 50% minimum at 5.0 mA. The TRansparent IOn Shield insures stable DC
gain in applications such as power supply feedback circuits, where constant
DC VIO voltages are present.
.045 (1.14)
.030 (.76)
4
°
typ.
.100 (2.54) typ.
.022 (.56)
.018 (.46)
.150 (3.81)
.130 (3.30)
.035 (.89)
.020 (.51)
(.79)
.031
.050 (1.27)
.265 (6.81)
.255 (6.48)
Pin one ID
.790 (20.07)
.779 (19.77)
pin one ID
.268 (6.81)
.255 (6.48)
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (0.76)
.100 (2.54) typ.
.022 (.56)
.018 (.46)
.150 (3.81)
.130 (3.30)
.035 (.89 )
.020 (.51 )
4
3
2
1
.031 (0.79)
(1.27)
.050
5
6
78
8
7
6
5
C
E
C
E
A
K
A
K
1
2
3
4
10
°
typ.
3
°–9°
.305 (7.75)
typ.
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
10
°
typ.
3
°–9°
.305 (7.75)
typ.
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
C
E
C
E
C
E
C
E
A
K
A
K
A
K
A
K
A=Anode K=Cathode C=Collector
Dimensions in inches (mm)
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