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參數(shù)資料
| 型號： | IN74HCT10A |
| 廠商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | Triple 3-Input NAND Gate |
| 中文描述： | 三3輸入與非門 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 179K |
| 代理商： | IN74HCT10A |
IN74HCT10A
AC ELECTRICAL CHARACTERISTICS
(V
CC
=5.0 V
±
10%, C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Guaranteed Limit
25
°
C
to
-55
°
C
Symbol
Parameter
≤
85
°
C
≤
125
°
C
Unit
t
PLH
, t
PHL
Maximum Propagation Delay, Input A,B or C to
Output Y (Figures 1 and 2)
19
24
29
ns
t
TLH
, t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
15
19
22
ns
C
IN
Maximum Input Capacitance
10
10
10
pF
Power Dissipation Capacitance (Per Gate)
Typical @25
°
C,V
CC
=5.0 V
27
C
PD
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC
2
f+I
CC
V
CC
pF
Figure 1. Switching Waveforms Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/3 of the Device)
4
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IN74HCT10AD | 制造商:INTEGRAL 制造商全稱:INTEGRAL 功能描述:Triple 3-Input NAND Gate |
| IN74HCT10AN | 制造商:INTEGRAL 制造商全稱:INTEGRAL 功能描述:Triple 3-Input NAND Gate |
| IN74HCT125A | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Quad 3-State Noninverting Buffers High-Performance Silicon-Gate CMOS |
| IN74HCT125AD | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Quad 3-State Noninverting Buffers High-Performance Silicon-Gate CMOS |
| IN74HCT125AN | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Quad 3-State Noninverting Buffers High-Performance Silicon-Gate CMOS |
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