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參數(shù)資料
| 型號(hào)： | IN74HCT20N |
| 廠商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS |
| 中文描述： | 雙4輸入與非門(mén)高性能硅柵CMOS |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | IN74HCT20N |
IN74HCT20
3
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
V
CC
V
Guaranteed Limit
25
°
C
to
-55
°
C
2.0
2.0
2.0
≤
85
°
C
≤
125
°
C
Unit
V
IH
Minimum
Level
Voltage
Maximum Low -
Level
Voltage
Minimum
Level
Voltage
High-
Input
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
≤
20
μ
A
4.5
5.5
2.0
2.0
2.0
V
V
IL
Input
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
≤
20
μ
A
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
V
OH
High-
Output
V
IN
=
I
OUT
≤
20
μ
A
V
IH
or
V
IL
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
V
IN
=
I
OUT
≤
4.0 mA
V
IN
=V
IH
I
OUT
≤
20
μ
A
V
IH
or
V
IL
4.5
4.5
5.5
3.98
0.1
0.1
3.84
0.1
0.1
3.7
0.1
0.1
V
OL
Maximum
Level
Voltage
Low-
Output
V
V
IN
=V
IH
I
OUT
≤
4.0 mA
V
IN
=V
CC
or GND
4.5
5.5
0.26
±
0.1
0.33
±
1.0
0.4
±
1.0
I
IN
Maximum
Leakage Current
Maximum
Quiescent Supply
Current
(per Package)
Quiescent
Additional Supply
Current
Input
μ
A
I
CC
V
IN
=V
CC
I
OUT
=0
μ
A
or
GND
5.5
2.0
20
40
μ
A
I
CC
V
IN
=2.4
Input
V
IN
=V
CC
or GND, Other
Inputs
I
OUT
=0
μ
A
V,Any
One
≥
-55
°
C
25
°
C to
125
°
C
mA
5.5
2.9
2.4
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