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參數(shù)資料
| 型號： | IN74HCT20N |
| 廠商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS |
| 中文描述： | 雙4輸入與非門高性能硅柵CMOS |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | IN74HCT20N |
IN74HCT20
4
AC ELECTRICAL CHARACTERISTICS
(V
CC
=5.0 V
±
10%,C
L
=50pF,Input t
r
=t
f
=6.0 ns)
Symbol
Parameter
Guaranteed Limit
25
°
C
to
-55
°
C
28
35
≤
85
°
C
≤
125
°
C
Unit
t
PLH
,
t
PHL
t
TLH
, t
THL
Maximum Output Transition Time, Any
Output (Figures 1 and 2)
C
IN
Maximum Input Capacitance
Maximum Propagation Delay, Input A
,B,C or D to Output Y (Figures 1 and 2)
42
ns
15
19
22
ns
10
10
10
pF
Power Dissipation Capacitance (Per
Gate)
Used to determine the no-load dynamic
power
P
D
=C
PD
V
CC
Typical @25
°
C,V
CC
=5.0
V
29
C
PD
consumption:
2
f+I
CC
V
CC
pF
Figure 1. Switching Waveforms
Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/2 of the Device)
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