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| 型號： | IRF034 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) |
| 中文描述： | 重復(fù)性雪崩和DV /受好評的HEXFET三極管通孔（TO-204AA/AE DT）的 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 144K |
| 代理商： | IRF034 |
IRF034
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJA
Junction to Case
Junction to Ambient
—
—
—
— 30
1.67
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
25
100
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
220
9.6
V
nS
μc
T
j
= 25°C, IS = 25A, VGS = 0V
Tj = 25°C, IF = 25A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.68
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
9.3
—
—
—
— 0.058
— 4.0 V
VDS = VGS, ID =250μA
—
—
S (
)
—
25
—
250
VGS = 0V, TJ = 125°C
—
100
—
-100
—
47
—
10
nC
—
22
—
21
—
110
—
53
—
80
6.1
—
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
0.050
VGS = 10V, ID = 16A
VGS(th)
gfs
IDSS
VDS > 15V, IDS =16A
VDS=48V, VGS=0V
VDS =48V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
21
4.4
9.7
—
—
—
—
—
VGS = 20V
VGS = -20V
VGS =10V, ID= 25A
VDS =30V
VDD =30V, ID = 25A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1300
650
100
VGS = 0V, VDS = 25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A
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