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參數(shù)資料
| 型號： | IRF450 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | IRF450 |
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF450
500
500
13
8.1
52
±
20
125
1.2
860
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
=
±
20V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
= 10V, I
D
= 7.2A (Figures 8, 9)
V
DS
≥
50V, I
D
= 7.2A (Figure 12)
V
DD
= 250V, I
D
≈
13A, R
G
= 6.2
, R
L
= 19
(Figures 17, 18) MOSFET SwitchingTimes are
Essentially Independent of Operating
Temperature
500
-
-
V
Gate to Threshold Voltage
2.0
-
4.0
V
Gate to Source Leakage
-
-
±
100
nA
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
13
-
-
A
Drain to Source On Resistance (Note 2)
-
0.3
0.400
Forward Transconductance (Note 2)
6.0
11
-
S
Turn-On Delay Time
-
20
27
ns
Rise Time
-
40
66
ns
Turn-Off Delay Time
-
72
100
ns
Fall Time
-
35
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 13A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge
is Essentially Independent of Operating
Temperature
-
85
130
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
12
-
nC
Gate to Drain “Miller” Charge
-
42
-
nC
Input Capacitance
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
1800
-
pF
Output Capacitance
-
400
-
pF
Reverse Transfer Capacitance
-
100
-
pF
Internal Drain Inductance
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in)fromtheFlange
to Source Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
0.83
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
30
L
S
L
D
G
D
S
IRF450
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF450 | 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET |
| IRF450 | TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A) |
| IRF450 | N-CHANNEL POWER MOSFET |
| IRF460 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF450 | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR |
| IRF450_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRF450R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA |
| IRF451 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRF451R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 13A I(D) | TO-204AA |
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