參數(shù)資料
型號: IRF450
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
中文描述: 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù): 5/7頁
文件大?。?/td> 56K
代理商: IRF450
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-20
20
100
160
B
0
-40
40
80
120 140
I
D
= 250
μ
A
0
2
10
2
5
10
2
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10000
8000
6000
4000
2000
0
5
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D
, DRAIN CURRENT (A)
4
8
12
16
0
20
20
16
12
0
8
g
f
,
80
μ
s PULSE TEST
4
V
DS
50V
T
J
= 150
o
C
T
J
= 25
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
0.1
0
0.5
1.0
1.5
2.0
2.5
T
J
= 25
o
C
T
J
= 150
o
C
2
5
2
5
2
5
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
25
50
75
100
0
125
4
20
8
V
G
16
V
DS
= 400V
I
D
= 13A
FOR TEST CIRCUIT, SEE FIGURE 18
V
DS
= 250V
V
DS
= 100V
12
0
IRF450
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