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參數(shù)資料
| 型號(hào)： | IRF450 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A) |
| 中文描述： | 三極管N -通道（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.400ohm，身份證\u003d 12A條） |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | IRF450 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
2
10
1
10
10
2
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
μ
s
100
μ
s
1ms
DC
10ms
10
3
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
10
3
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
100
150
200
0
250
20
16
12
0
8
I
D
,
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.0V
80
μ
s PULSE TEST
4
V
GS
= 6.0V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
0
15
20
16
12
0
8
I
D
,
80
μ
s PULSE TEST
4
V
GS
= 10V
V
GS
= 5.5V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.0V
V
GS
= 6.0V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
10
-2
0
2
4
6
8
10
T
J
= 150
o
C
T
J
= 25
o
C
2
2
2
2
5
5
5
80
μ
s PULSE TEST
V
DS
≥
50V
5
10
2
48
I
D
, DRAIN CURRENT (A)
12
24
36
0
60
2.0
1.6
1.2
0
0.8
D
V
GS
= 20V
0.4
V
GS
= 10V
80
μ
s PULSE TEST
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
2.4
1.2
0
0
60
120
160
N
I
D
= 13A
V
GS
= 10V
-20
-40
20
40
100
140
O
IRF450
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF450 | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR |
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| IRF450R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA |
| IRF451 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:N-CHANNEL POWER MOSFETS |
| IRF451R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 13A I(D) | TO-204AA |
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