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參數(shù)資料
| 型號(hào)： | IRF460 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21) |
| 中文描述： | 三極管N -通道（減振鋼板基本\u003d 500V及的Rds（on）\u003d 0.27ohm，身份證\u003d 21） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | IRF460 |
IRF460
Prelim. 11/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0V , I
D
= 1mA
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±20V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 13A
V
GS
= 10V , I
D
= 21A
Min.
500
Typ.
Max.
Unit
V
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STG
T
L
1
2
(c3
25.15 (0.99)
10.67 (0.42)
11.18 (0.44)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
0
1
7.92 (0.312)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
500
21
84
±20
300
2.4
–55 to 150
300
V
A
A
V
W
W/°C
°C
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
25
250
±100
2
4
21
0.27
0.31
μ
A
nA
V
A
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D(cont)
R
DS(on)
500V
21A
0.27
Pin 1 – Gate
Pin 2 – Source
Case – Drain
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