- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384490 > IRF4905 (International Rectifier) Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF4905 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份證\u003d- 74A條） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | IRF4905 |
IRF4905
HEXFET
Power MOSFET
PD - 9.1280C
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Max.
-74
-52
-260
200
1.3
± 20
930
-38
20
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.02
I
D
= -74A
TO-220AB
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
P-Channel
l
Fully Avalanche Rated
Description
8/25/97
S
D
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF510SPBF | HEXFET Power MOSFET |
| IRF520 | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRF530 | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRF540N | 30V N-Channel PowerTrench MOSFET |
| IRF540N | Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF4905-011PBF | 制造商:International Rectifier 功能描述: |
| IRF4905L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| IRF4905LHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 74A 3-Pin(3+Tab) TO-262 |
| IRF4905LPBF | 功能描述:MOSFET MOSFT PCh -55V -74A 20mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF4905LPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor Transistor Polarity:P |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。