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參數(shù)資料
| 型號： | IRF7523D1 |
| 廠商： | International Rectifier |
| 英文描述： | FETKY⑩ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V) |
| 中文描述： | FETKY⑩MOSFET的/肖特基二極管（減振鋼板基本\u003d 30V的，的Rds（on）\u003d0.11Ω的，肖特基室顫\u003d 0.39V） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 204K |
| 代理商： | IRF7523D1 |
www.irf.com
1
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Maximum
2.7
2.1
21
1.25
0.8
10
± 20
6.2
-55 to +150
Units
A
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
IRF7523D1
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
SD
≤
1.7A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
Parameter
R
θ
JA
Maximum
100
Units
°C/W
Junction-to-Ambient
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
3/17/99
G
Co-packaged HEXFET
Power MOSFET
and Schottky Diode
G
N-Channel HEXFET
G
Low V
F
Schottky Rectifier
G
Generation 5 Technology
G
Micro8
TM
Footprint
FETKY
MOSFET / Schottky Diode
Description
V
DSS
= 30V
R
DS(on)
= 0.11
Schottky Vf = 0.39V
Micro8
TM
Top View
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
TM
package, with half the footprint area of the standard SO-8, provides
TM
an ideal
TM
will allow it to fit easily into extremely thin application
PD- 91647C
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| IRF7524D1 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V) |
| IRF7524D1GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:FETKY MOSFET & Schottky Diode |
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