參數(shù)資料
型號(hào)： IRF9150
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述： 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 57K
代理商： IRF9150
5-20
File Number
2280.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF9150
-25A, -100V 0.150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA49230.
Features
-25A, -100V
r
DS(ON)
= 0.150
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Symbol
Packaging
JEDEC TO-204AE
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9150
TO-204AE
IRF9150
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
February 1999
相關(guān)PDF資料
PDF描述
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IRF9520 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 Ω, P溝道功率MOS場(chǎng)效應(yīng)管)
IRF9530 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 100V, 0.300 Ohm,P溝道功率MOS場(chǎng)效應(yīng)管)
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