參數(shù)資料
型號： IRF9510
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET(3.0A, 100V, 1.200 Ω,P溝道功率MOS場效應管)
中文描述： 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大小： 59K
代理商： IRF9510
5-4
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9510
-100
-100
-3.0
-2.0
-12
±
20
20
0.16
190
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
PARAMETER
TEST CONDITIONS
MIN
-100
-2.0
-
-
-
-3.0
TYP
-
-
-
-
-
-
MAX
-
-4.0
±1
00
-25
-250
-
UNITS
V
V
nA
μ
A
μ
A
A
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Gate to Source Leakage Current
Zero-Gate Voltage Drain Current
V
GS
= 0V, I
D
= -250
μ
A, (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
GS
=
±
20V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= -10V,
(Figure 7)
V
GS
= -10V, I
D
= -1.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)
Max, I
D
= -1.5A,
(Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-3.0A,
R
G
= 50
, V
GS
= 10V, (Figures 17, 18)
R
L
= 15.7
for V
DSS =
50V
R
L
= 12.3
for V
DSS
= 40V
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V
GS
= -10V, I
D
= -3A, V
DS
= 0.8 x Rated BV
DSS,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
On-State Drain Current (Note 2)
I
D(ON)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
r
DS(ON)
g
fs
-
1.000
1.1
1.200
-
S
0.8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
-
-
-
-
15
30
20
20
30
60
40
40
ns
ns
ns
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Q
g(TOT)
-
8.5
11
nC
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
3.8
4.7
180
85
30
3.5
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
V
GS
= 0V, V
DS
= -25V, f = 1.0MHz,
(Figure 11)
Measured From the
Contact Screw on Tab
to Center of Die
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From The
Source Lead, 6mm
(0.25in)FromHeaderto
Source Bonding Pad
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Junction to Case
Junction to Ambient
R
θ
JC
R
θ
JA
-
-
-
-
6.4
62.5
o
C/W
o
C/W
Typical Socket Mount
L
S
L
D
G
D
S
IRF9510
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