參數(shù)資料
型號(hào)： IRF9640
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： CAP CERAMIC 5PF 50V C0G 0402
中文描述： 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/7頁
文件大小： 63K
代理商： IRF9640
4-34
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF9640, RF1S9640SM
-200
-200
-11
-7
-44
±
20
125
1
790
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3, 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= -250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= -250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= -10V
V
GS
=
±
20V
I
D
= -6A, V
GS
= -10V (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= -6A (Figure 12)
V
DD
= 0.5 x Rated BV
DSS
, I
D
≈
-11A, R
G
= 9.1
V
GS
= -10V (Figures 17, 18)
R
L
= 8.4
for V
DSS
= -100V
R
L
= 6.1
for V
DSS
= -75V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
-200
-
-
V
Gate Threshold Voltage
-2
-
-4
V
μ
A
μ
A
A
Zero Gate Voltage Drain Current
-
-
25
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
-11
-
-
Gate to Source Leakage Current
-
-
±
100
0.500
nA
S
Drain to Source On Resistance (Note 2)
-
0.350
Forward Transconductance (Note 2)
4
6
-
Turn-On Delay Time
-
18
22
ns
Rise Time
-
45
68
ns
Turn-Off Delay Time
-
75
90
ns
Fall Time
-
29
44
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= -10V, I
D
= -11A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
70
90
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
55
-
nC
Gate to Drain “Miller” Charge
-
15
-
nC
Input Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 11)
-
1100
-
pF
Output Capacitance
-
375
-
pF
Reverse Transfer Capacitance
-
150
-
pF
Internal Drain Inductance
Measured From the
Contact Screw on Tab To
Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
-
3.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
MeasuredFromtheSource
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Typical Socket Mount
-
-
62.5
L
S
L
D
G
D
S
IRF9640, RF1S9640SM
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