參數(shù)資料
型號(hào)： IRF9952
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=+-30V)
中文描述： 功率MOSFET（減振鋼板基本\u003d - 30V的）
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 134K
代理商： IRF9952
IRF9952
Surface mounted on FR-4 board, t
≤
10sec.
Parameter
Min. Typ. Max. Units
N-Ch 30
—
P-Ch -30
—
N-Ch
— 0.015
P-Ch
— 0.015
—
0.08 0.10
—
0.12 0.15
— 0.1650.250
— 0.2900.400
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch
—
12
P-Ch
—
2.4
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
—
6.9
P-Ch
—
6.1
N-Ch
—
1.0
P-Ch
—
1.7
N-Ch
—
1.8
P-Ch
—
1.1
N-Ch
—
6.2
P-Ch
—
9.7
N-Ch
—
8.8
P-Ch
—
14
N-Ch
—
13
P-Ch
—
20
N-Ch
—
3.0
P-Ch
—
6.9
N-Ch
—
190
P-Ch
—
190
N-Ch
—
120
P-Ch
—
110
N-Ch
—
61
P-Ch
—
54
Conditions
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 2.2A
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 15V, I
D
= 3.5A
V
DS
= -15V, I
D
= -2.3A
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ±20V
—
—
—
—
2.0
-2.0
25
-25
±100
14
12
2.0
3.4
3.5
2.2
12
19
18
28
26
40
6.0
14
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
pF
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
V
S
μA
nC
ns
N-Channel
I
D
= 1.8A, V
DS
= 10V, V
GS
= 10V
P-Channel
I
D
= -2.3A, V
DS
= -10V, V
GS
= -10V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0
,
R
D
= 10
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0
,
R
D
= 10
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
0.82
—
-0.82 -1.2
—
27
—
27
—
28
—
31
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.7
-1.3
16
16
1.2
T
J
= 25°C, I
S
= 1.25A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
=1.25A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.25A, di/dt = 100A/μs
53
54
57
62
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel I
SD
≤
2.0A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.3A, di/dt
≤
84A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel Starting T
J
= 25°C, L = 22mH R
G
= 25
, I
AS
= 2.0A. (See Figure 12)
P-Channel Starting T
J
= 25°C, L = 67mH R
G
= 25
, I
AS
= -1.3A.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
nA
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