參數(shù)資料
型號： IRFP244
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為250V，導通電阻為0.28Ω，漏電流為16A）)
中文描述： 16 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 472K
代理商： IRFP244
IRFP244
250
--
2.0
--
--
--
--
--
0.28
--
--
--
--
--
180
80
17
17
74
32
46
9.3
19.5
--
--
4.0
100
-100
10
100
0.28
--
1600
210
95
50
50
160
80
61
--
--
9.18
1230
--
--
--
215
1.59
16
64
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=3mH, I
AS
=16A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
≤
14A, di/dt
≤
250A/
μ
s, V
≤
BV
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=250V
V
DS
=200V,T
C
=125
°
C
V
GS
=10V,I
D
=8A
(4)
V
DS
=40V,I
D
=8A
(4)
V
DD
=125V,I
D
=14A,
R
G
=9.1
See Fig 13
(4) (5)
V
DS
=200V,V
GS
=10V,
I
D
=14A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=16A,V
GS
=0V
T
J
=25
°
C,I
F
=14A
di
F
/dt=100A/
μ
s
(4)
相關PDF資料
PDF描述
IRFP250A Advanced Power MOSFET
IRFP254A N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為250V，導通電阻為0.14Ω，漏電流為25A）)
IRFP254 N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為250V，導通電阻為0.14Ω，漏電流為25A）)
IRFP340A N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為400V，導通電阻為0.55Ω，漏電流為11A）)
IRFP340B 400V N-Channel MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRFP244A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) | TO-247VAR
IRFP244B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFP244B_FP001 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP244B_FP001_Q 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP244PBF 功能描述:MOSFET N-Chan 250V 15 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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