參數(shù)資料
型號： IRFP244A
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.28Ω，漏電流為16A）)
中文描述： N溝道功率MOSFET（不適用溝道增強型功率馬鞍山場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.28Ω，漏電流為16A條））
文件頁數(shù)： 1/7頁
文件大?。?/td> 1000K
代理商： IRFP244A
IRFS244A
BV
DSS
= 250 V
R
DS(on)
= 0.28
I
D
= 10.2 A
250
10.2
6.5
64
±
30
455
10.2
7.3
4.8
73
0.59
- 55 to +150
300
1.7
40
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 250V
Lower R
DS(ON)
: 0.214
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRFP244 N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.28Ω，漏電流為16A）)
IRFP250A Advanced Power MOSFET
IRFP254A N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.14Ω，漏電流為25A）)
IRFP254 N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.14Ω，漏電流為25A）)
IRFP340A N-Channel Power MOSFET(N溝道增強型功率MOS場效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為0.55Ω，漏電流為11A）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP244B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFP244B_FP001 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP244B_FP001_Q 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP244PBF 功能描述:MOSFET N-Chan 250V 15 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP244U 制造商:Harris Corporation 功能描述:
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