參數(shù)資料
型號(hào)： IRFP254
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為250V，導(dǎo)通電阻為0.14Ω，漏電流為25A）)
中文描述： 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 2/7頁
文件大小： 244K
代理商： IRFP254
1&+$11(/
32:(5 026)(7
Electrical Characteristics
(T
C
=25
°
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/
T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
°
C
V
nA
μ
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
μ
A
I
D
=250
μ
A
See Fig 7
V
DS
=5V,I
D
=250
μ
A
V
GS
=30V
V
GS
=-30V
V
DS
=250V
V
DS
=200V,T
C
=125
°
C
V
GS
=10V,I
D
=12.5A
(4)
V
DS
=40V,I
D
=12.5A
(4)
V
DD
=125V,I
D
=25A,
R
G
=5.3
See Fig 13
(4) (5)
V
DS
=200V,V
GS
=10V,
I
D
=25A
See Fig 6 & Fig 12
(4) (5)
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
μ
C
Integral reverse pn-diode
in the MOSFET
T
J
=25
°
C,I
S
=25A,V
GS
=0V
T
J
=25
°
C,I
F
=25A
di
F
/dt=100A/
μ
s
(4)
IRFP254
250
--
2.0
--
--
--
--
--
0.27
--
--
--
--
--
345
155
21
20
86
40
88
16
35.6
--
--
4.0
100
-100
10
100
0.14
--
3000
400
180
60
60
190
100
114
--
--
17.45
2300
--
--
--
255
2.3
25
100
1.5
--
--
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, I
AS
=25A, V
DD
=50V, R
G
=27
, Starting T
J
=25
°
C
(3) I
SD
≤
25A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25
°
C
(4) Pulse Test: Pulse Width = 250
μ
s, Duty Cycle
≤
2%
(5) Essentially Independent of Operating Temperature
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRFP340A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為0.55Ω，漏電流為11A）)
IRFP340B 400V N-Channel MOSFET
IRFP350A Advanced Power MOSFET
IRFP350 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為400V，導(dǎo)通電阻為0.3Ω，漏電流為17A）)
IRFP440A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.85Ω，漏電流為8.5A）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP254A 制造商:IRF 制造商全稱:International Rectifier 功能描述: GYDQFHG 3RZHU 026)(7
IRFP254B 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP254B_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP254BFP001 制造商:Fairchild Semiconductor Corporation 功能描述:
IRFP254N 功能描述:MOSFET N-Chan 250V 23 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*