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參數(shù)資料
| 型號： | IRFP340B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V N-Channel MOSFET |
| 中文描述： | 11 A, 400 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 681K |
| 代理商： | IRFP340B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFP340B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Features
11A, 400V, R
DS(on)
= 0.54
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFP340B
400
11
7.0
44
±
30
450
11
16.2
5.5
162
1.3
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.77
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
S
!
!
!
D
G
TO-3P
IRFP Series
G
S
D
相關PDF資料 |
PDF描述 |
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| IRFP350A | Advanced Power MOSFET |
| IRFP350 | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為400V，導通電阻為0.3Ω，漏電流為17A）) |
| IRFP440A | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為500V，導通電阻為0.85Ω，漏電流為8.5A）) |
| IRFP440 | N-Channel Power MOSFET(N溝道增強型功率MOS場效應管（漏源電壓為500V，導通電阻為0.85Ω，漏電流為8.5A）) |
| IRFP460C | 500V N-Channel MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP340PBF | 功能描述:MOSFET N-Chan 400V 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP340R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-247AC |
| IRFP341 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| IRFP3411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-247VAR |
| IRFP3415 | 制造商:International Rectifier 功能描述:N CH MOSFET, 150V, 43A, TO-247AC, Transistor Polarity:N Channel, Continuous Drai |
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