參數(shù)資料
型號(hào)： IRFR130
廠商： Fairchild Semiconductor Corporation
英文描述： Advanced Power MOSFET
中文描述： 先進(jìn)的功率MOSFET
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 261K
代理商： IRFR130
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
Lower R
DS(ON)
: 0.092
A (Max.) @ V
DS
= 100V
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
)
)
)
)
Characteristic
Value
100
13
8.2
52
2
0
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
A
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
μ
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
Ο
C
θ
θ
Ο
C
IRFR/U130A
BV
DSS
= 100 V
R
DS(on)
= 0.11
I
D
= 13 A
225
13
4.1
6.5
2.5
41
0.32
- 55 to +150
300
3.08
50
110
--
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRFRU130A Advanced Power MOSFET
IRFR210B 200V N-Channel MOSFET
IRFU210B 200V N-Channel MOSFET
IRFRU120A Advanced Power MOSFET
IRFR120A Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR130A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFR130ATF 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR130ATM 功能描述:MOSFET 100V N-Channel A-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR13N15D 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 14A 3PIN DPAK - Rail/Tube 制造商:International Rectifier 功能描述:14 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR13N15DPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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