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參數(shù)資料
| 型號(hào)： | IRFRU110A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IRFRU110A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.289 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
θ
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 )
Total Power Dissipation (T
C
=25 )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
100
4.7
3
19
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
A
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
O
1
O
O
1
O
1
2
O
3
Ο
C
Ο
C
Ο
C
Ο
C
θ
θ
Ο
C
Ο
C
Ο
C
IRFR/U110A
BV
DSS
= 100 V
R
DS(on)
= 0.4
I
D
= 4.7 A
59
4.7
2
6.5
2.5
20
0.16
- 55 to +150
300
6.26
50
110
--
--
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
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