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參數(shù)資料
| 型號： | IRFRU110A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 255K |
| 代理商： | IRFRU110A |
N-C HANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
5
I
D
Fig 9. Max. Safe Operating Area
P
DM
t
1
t
2
IRFR/U110A
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
D
T
J
, Junction Temperature [
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 2.8 A
R
D
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
DC
100
μ
s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
T
c
, Case Temperature [
o
C]
10
-5
10
-4
t
1
, Square Wave Pulse Duration [sec]
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ
JC
(t)=6.26
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ
JC
(t)
Z
θ
J
(
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