參數(shù)資料
型號(hào)： IRFRU1205
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.027ohm，身份證\u003d第44A）
文件頁數(shù)： 2/10頁
文件大?。?/td> 144K
代理商： IRFRU1205
IRFR/U1205
2
www.irf.com
Parameter
Min.
55
–––
–––
2.0
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.055 –––
––– 0.027
–––
4.0
–––
–––
–––
25
–––
250
–––
100
–––
-100
–––
65
–––
12
–––
27
7.3
–––
69
–––
47
–––
60
–––
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 26A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 25A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 25A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 25A
R
G
= 12
R
D
= 1.1
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
410
150
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5 –––
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
=25A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
65
160
1.3
98
240
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
44
160
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 470μH
R
G
= 25
, I
AS
= 25A. (See Figure 12)
I
SD
≤
25A, di/dt
≤
320A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Uses IRFZ44N data and test conditions
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
Pulse width
≤
300μs; duty cycle
≤
2%.
相關(guān)PDF資料
PDF描述
IRFU1205 Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
IRFR1205 Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
IRFRU4105 Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A)
IRFR4105 55V,27A,N-Channel HEXFET Power MOSFET(55V,27A,N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
IRFU4105 55V,27A,N-Channel HEXFET Power MOSFET(55V,27A,N溝道 HEXFET 功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFRU120A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFRU130A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFRU220A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFRU3707PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET㈢ Power MOSFET
IRFRU3910 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*