參數(shù)資料
型號(hào)： IRFS630B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 200V N-Channel MOSFET
中文描述： 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 859K
代理商： IRFS630B
2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
I
IRF630B/IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
9.0A, 200V, R
DS(on)
= 0.4
@V
GS
= 10 V
Low gate charge ( typical 22 nC)
Low Crss ( typical 22 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF630B
IRFS630B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
200
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
9.0
5.7
36
9.0 *
5.7 *
36 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
160
9.0
7.2
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
72
0.57
38
0.3
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF630B
1.74
0.5
62.5
IRFS630B
3.33
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
相關(guān)PDF資料
PDF描述
IRF630B 200V N-Channel MOSFET
IRFS634B 250V N-Channel MOSFET
IRF634B 250V N-Channel MOSFET
IRFS640A N-Channel Power MOSFET（200V，0.18Ω，9.8A）(N溝道功率MOS場(chǎng)效應(yīng)管（漏源電壓200V，導(dǎo)通電阻0.18Ω，漏電流9.8）)
IRFS710A N-Channel Power MOSFET（400V，3.6Ω，1.6A）(N溝道功率MOS場(chǎng)效應(yīng)管（漏源電壓400V，導(dǎo)通電阻3.6Ω，漏電流1.6A）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS630B_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS631 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5.9A I(D) | SOT-186
IRFS634 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5.5A I(D) | TO-220VAR
IRFS634A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Advanced Power MOSEFT
IRFS634B 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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