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參數(shù)資料
| 型號： | IRFS634B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 859K |
| 代理商： | IRFS634B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
8.1A, 250V, R
DS(on)
= 0.45
@V
GS
= 10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF634B
IRFS634B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
250
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
8.1
5.1
32.4
8.1 *
5.1 *
32.4 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
200
8.1
7.4
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
74
0.59
38
0.3
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF634B
1.69
0.5
62.5
IRFS634B
3.29
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
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| IRFS740A | N-Channel Power MOSFET（400V，0.55Ω，5.7A）(N溝道功率MOS場效應(yīng)管（漏源電壓400V，導(dǎo)通電阻0.55Ω，漏電流5.7A）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS634B_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS634BT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| IRFS634BT_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS635 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.4A I(D) | TO-220VAR |
| IRFS640 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
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