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參數(shù)資料
| 型號： | IRFU410 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 1.5 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IRFU410 |
4-402
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR410, IRFU410
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
V
500
V
1.5
1.2
A
A
3.0
A
±
20
V
42
W
0.33
W/
o
C
Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Refer to UIS Curve
mJ
o
C
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
500
-
-
V
Temperature Coefficient of
Breakdown Voltage
B-
V
DSS
/
T
J
Reference to 25
o
C, I
D
= 250
μ
A
-
0.61
-
V/
o
C
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
-
-
25
μ
A
V
DS
= 500V, V
GS
= 0V, T
J
= 125
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 3)
r
DS(ON)
I
D
= 1.5A, V
GS
= 10V, (Figure 9)
-
-
7.000
Forward Transconductance (Note 3)
g
fs
V
DS
= 50V, I
DS
= 0.75A, (Figure 8)
0.5
-
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 250V, I
D
≈
1.5A, R
GS
= 24
, R
L
= 167
,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
7
-
ns
Rise Time
t
r
-
10
-
ns
Turn-Off Delay Time
t
d(OFF)
-
24
-
ns
Fall Time
t
f
-
15
-
ns
Total Gate Charge
Q
g(TOT)
VGS = 10V, ID
≈
1.5A, VDS = 0.8 x Rated BV
DSS
,
(Figure 12)
Gate Charge is Essentially Independent of
Operating Temperature
-
9
12
nC
Gate to Source Charge
Q
gs
-
1.1
1.4
nC
Gate to Drain “Miller” Charge
Q
gd
-
5
7
nC
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz,
(Figure 10)
-
210
-
pF
Output Capacitance
C
OSS
-
30
-
pF
Reverse Transfer Capacitance
C
RSS
-
7
-
pF
IRFR410, IRFU410
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