參數(shù)資料
型號(hào)： IRFZ48ZS
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/12頁
文件大?。?/td> 280K
代理商： IRFZ48ZS
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.11mH,
R
G
= 25
, I
AS
= 37A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
37A, di/dt
≤
920A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient –––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
55
Typ. Max. Units
–––
–––
0.054
–––
8.6
11
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
43
64
11
16
16
24
15
–––
69
–––
35
–––
39
–––
4.5
–––
V
V/°C
m
V
S
μA
2.0
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1720
300
160
1020
230
380
–––
–––
–––
–––
–––
–––
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
61
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
240
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
20
13
1.3
31
20
V
ns
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 37A
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 10V
MOSFET symbol
Conditions
T
J
= 25°C, I
F
= 37A, V
DD
= 30V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 37A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
R
G
= 12
I
D
= 37A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 37A
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