- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384500 > IRG4BH20K-S (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | IRG4BH20K-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | IRG4BH20K-S |
IRG4BH20K-L
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
28
—
4.4
—
12
—
23
—
26
—
93
—
270
—
0.45
—
0.44
—
0.89
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
43
6.6
18
—
—
140
400
—
—
1.2
—
I
C
= 5.0A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
=5.0A, V
CC
= 960V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
=
720V, T
J
= 125°C
V
GE
= 15V, R
G
= 50
T
J
= 150°C,
I
C
= 5.0A, V
CC
= 960V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
23
28
100
620
1.7
7.5
435
44
8.3
—
—
—
—
—
—
—
—
—
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
1200
—
18
—
—
1.13
—
3.17
—
4.04
—
2.84
3.5
—
—
-10
2.3
3.5
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
4.3
—
—
6.5
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 2.5mA
I
C
= 5.0A V
GE
= 15V
I
C
= 11A
I
C
= 5.0A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 1mA
S
V
CE
= 100 V, I
C
= 5.0A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
=50
,
(See fig. 13a)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4IBC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BH20K-SPBF | 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BH20K-SPBF | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:D2-PAK |
| IRG4BH20K-STRLP | 功能描述:IGBT 模塊 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4BH40FD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BH40KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。