- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384500 > IRG4BH20K-S (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | IRG4BH20K-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IRG4BH20K-S |
IRG4BH20K-L
www.irf.com
3
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
L
0.1
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I
C
20μs PULSE WIDTH
V = 15V
GE
T = 150 C
T = 25 C
°
0
4
8
12
16
0.1
1
10
100
f, Frequency (kHz)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125C
T = 90C
Gate drive as specified
Power Dissipation = 15W
Triangular wave:
Clamp voltage:
80% of rated
1
10
100
6
8
10
12
14
V , Gate-to-Emitter Voltage (V)
I
C
5μs PULSE WIDTH
V = 50V
CC
T = 25 C
T = 150 C
°
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4IBC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BH20K-SPBF | 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BH20K-SPBF | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:D2-PAK |
| IRG4BH20K-STRLP | 功能描述:IGBT 模塊 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4BH40FD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BH40KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。