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參數(shù)資料
| 型號： | IRG4BH20K-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IRG4BH20K-S |
IRG4BH20K-L
www.irf.com
5
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
1
10
100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C
C
V
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
ies
C
oes
C
res
0
10
R , Gate Resistance (Ohm)
20
30
40
50
0.70
0.75
0.80
0.85
0.90
0.95
T
T = 25 C
I = 11A
V = 960V
V = 15V
GE
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I
V
= 400V
= 11A
CC
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
0.1
1
10
T , Junction Temperature ( C )
T
V = 960V
R = 50Ohm
V = 15V
GE
I = A
10
I = A
5
I = A
2.5
, Junction Temperature ( °C )
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BH20K-SPBF | 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BH20K-SPBF | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:D2-PAK |
| IRG4BH20K-STRLP | 功能描述:IGBT 模塊 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4BH40FD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BH40KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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