參數(shù)資料
型號： IRG4IBC20KDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 1/10頁
文件大小： 288K
代理商： IRG4IBC20KDPBF
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
11.5
6.3
23
24
6.3
24
10
2500
± 20
34
14
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
IRG4IBC20KDPbF
Short Circuit Rated
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High switching speed optimized for up to 25kHz
with low V
CE(on)
Short Circuit Rating 10μs @ 125°C, V
GE
= 15V
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220 FULLPAK
Lead-Free
Benefits
Generation 4 IGBTs offer highest efficiencies available
maximizing the power density of the system
IGBTs optimized for specific application conditions
HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI
Designed to exceed the power handling capability of
equivalent industry-standard IGBTs
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
=
2.27V
@V
GE
= 15V, I
C
= 6.3A
UltraFast IGBT
12/30/03
PD -94916
Absolute Maximum Ratings
W
TO-220 FULLPAK
Parameter
Typ.
–––
–––
–––
2.0 (0.07)
Max.
3.7
5.5
65
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
V
°C
www.irf.com
1
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IRG4IBC20UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4IBC20UD 制造商:International Rectifier 功能描述:IGBT TO-220 FULLPAK
IRG4IBC20UDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4IBC20W 功能描述:IGBT WARP 600V 11.8A TO-220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4IBC20W_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC20WPBF 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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