參數(shù)資料
型號： IRG4PC50U
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.65V的，@和VGE \u003d 15V的，集成電路\u003d 27A條）
文件頁數(shù)： 2/8頁
文件大小： 147K
代理商： IRG4PC50U
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
----
180
----
25
----
61
----
32
----
20
----
170
----
88
----
0.12
----
0.54
----
0.66
----
31
----
23
----
230
----
120
----
1.6
----
13
----
4000
----
250
----
52
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
270
38
90
----
----
260
130
----
----
0.9
----
----
----
----
----
----
----
----
----
I
C
= 27A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25
°
C
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 10, 11, 13, 14
mJ
T
J
= 150
°
C,
I
C
= 27A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage ----
Min. Typ. Max. Units
600
----
18
----
0.60
----
1.65
----
2.0
----
1.6
3.0
----
----
-13
16
24
----
----
----
----
----
----
----
----
Conditions
V
(BR)CES
V
(BR)ECS
----
----
----
2.0
----
----
6.0
----
----
250
2.0
5000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 27A V
GE
= 15V
I
C
= 55A
I
C
= 27A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
≥
15V, I
C
= 27A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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