參數(shù)資料
型號(hào): IRG4PC60F
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數(shù): 1/8頁
文件大小: 118K
代理商: IRG4PC60F
Parameter
Max.
600
90
60
120
120
± 20
200
520
210
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
IRG4PC60F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
TO-247AC
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
Industry standard TO-247AC package.
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
Benefits
V
CES
= 600V
V
CE(on)
typ.
=
1.50V
@V
GE
= 15V, I
C
= 60A
04/26/02
Parameter
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.24
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
1
PD - 94442
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