參數(shù)資料
型號(hào)： IRG4PH20KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 3.17V，@和VGE \u003d 15V的，集成電路\u003d 5.0a中）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 229K
代理商： IRG4PH20KD
IRG4PH20K
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
28
—
4.4
—
12
—
23
—
26
—
93
—
270
—
0.45
—
0.44
—
0.89
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
43
6.6
18
—
—
140
400
—
—
1.2
—
I
C
= 5.0A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
=5.0A, V
CC
= 960V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
=
720V, T
J
= 125°C
V
GE
= 15V, R
G
= 50
T
J
= 150°C,
I
C
= 5.0A, V
CC
= 960
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
23
28
100
620
1.7
13
435
44
8.3
—
—
—
—
—
—
—
—
—
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
1200
—
18
—
—
1.13
—
3.17
—
4.04
—
2.84
3.5
—
—
-10
2.3
3.5
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
4.3
—
—
6.5
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 2.5mA
I
C
= 5.0A V
GE
= 15V
I
C
= 11A
I
C
= 5.0A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 1mA
S
V
CE
= 100 V, I
C
= 5.0A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
=50
,
(See fig. 13a)
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