參數(shù)資料
型號(hào)： IRG4PSC71U
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.67V，@和VGE \u003d 15V的，集成電路\u003d 60A條）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 151K
代理商： IRG4PSC71U
IRG4PSC71U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91681A
E
C
G
n-channel
Features
UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
Creepage distance increased to 5.35mm
Benefits
Generation 4 IGBT's offer highest efficiencies
available
Maximum power density, twice the power
handling of the TO-247, less space than TO-264
IGBTs optimized for specific application conditions
Cost and space saving in designs that require
multiple, paralleled IGBTs
Absolute Maximum Ratings
V
CES
= 600V
V
CE(on) typ.
= 1.67V
@V
GE
= 15V, I
C
= 60A
Parameter
Max.
600
85
60
200
200
± 20
180
350
140
-55 to + 150
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
mJ
300 (0.063 in. (1.6mm from case )
°C
W
5/12/99
www.irf.com
1
SUPER - 247
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
–––
38
–––
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
°C/W
N (kgf)
g (oz)
Thermal Resistance\ Mechanical
相關(guān)PDF資料
PDF描述
IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG4PSH71U INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSH71 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
IRG4PSH71K INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
IRG4PSH71KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PSC71UD 制造商:International Rectifier 功能描述:IGBT
IRG4PSC71UDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PSC71UPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PSH71 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
IRG4PSH71K 制造商:International Rectifier 功能描述:IGBT
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