參數(shù)資料
型號： IRG4PSC71UD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.67V，@和VGE \u003d 15V的，集成電路\u003d 60A條）
文件頁數(shù)： 2/10頁
文件大?。?/td> 253K
代理商： IRG4PSC71UD
IRG4PSC71UD
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
–––
340
–––
44
–––
160
–––
90
–––
94
–––
245
–––
110
–––
3.26
–––
2.27
–––
5.53
–––
91
–––
88
–––
353
–––
150
–––
7.1
–––
13
––– 7500
–––
720
–––
93
–––
82
–––
140
–––
8.2
–––
13
–––
364
––– 1084 1625
–––
328
–––
266
Conditions
520
66
240
–––
–––
368
167
–––
–––
7.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
210
12
20
546
I
C
= 60A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 60A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
I
rr
Diode Peak Reverse Recovery Current
Q
rr
Diode Reverse Recovery Charge
di
(rec)M
/dt
During t
b
Diode Peak Rate of Fall of Recovery
–––
–––
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
–––
–––
0.39
–––
1.67
–––
1.95
–––
1.71
3.0
–––
-13
47
70
–––
–––
–––
–––
–––
1.4
–––
1.3
–––
––– ±100
Conditions
–––
–––
2.0
–––
–––
6.0
––– mV/°C V
CE
= V
GE
, I
C
= 1.5mA
–––
S
V
CE
= 50V, I
C
= 60A
500
μA
V
GE
= 0V, V
CE
= 600V
13
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
I
C
= 60A
–––
I
C
= 60A, T
J
= 150°C
nA
V
GE
= ±20V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 10mA
I
C
= 60A
I
C
= 100A
I
C
= 60A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V/°C
V
GE
= 15V
See Fig. 2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage –––
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V
ns
A
nC
A/μs
相關(guān)PDF資料
PDF描述
IRG4PSC71KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG4PSH71U INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSH71 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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參數(shù)描述
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IRG4PSC71UPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PSH71 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
IRG4PSH71K 制造商:International Rectifier 功能描述:IGBT
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