參數(shù)資料
型號: IRG4PSH71U
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數(shù): 2/8頁
文件大?。?/td> 271K
代理商: IRG4PSH71U
IRG4PSH71U
2
www.irf.com
Notes:
Repetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature (figure 20)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH, R
G
= 5.0
(figure 13a)
Pulse width
80μs; duty factor
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; pulse width limited by maximumjunction temperature.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units Conditions
1200
V
19
V
0.78
V/°C V
GE
= 0V, I
C
= 1mA
2.52
2.70
V
3.17
2.68
3.0
6.0
-9.2
mV/°CV
CE
= V
GE
, I
C
= 1.0mA
48
72
S
500
μA
2.0
5000
±100
nA
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
I
C
= 70A
I
C
= 140A
I
C
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
GE
= 15V
See Fig.2, 5
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
V
CE
= 100V, I
C
= 70A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
GE
= ±20V
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
TS
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
370
61
120
51
70
280
170
4.77
9.54
14.3
49
70
390
360
25
13
7280
290
50
Conditions
I
C
= 70A
V
CC
= 400V See Fig.8
V
GE
= 15V
I
C
= 70A, V
CC
= 960V
ns
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 9, 10, 11, 14
560
24
50
390
260
15.8
nC
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 14
ns
I
C
= 70A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
mJ
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V, See Fig.7
f = 1.0MHz
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