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| 型號： | IRH9250 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d-為200V，的Rds（on）\u003d 0.315ohm，身份證\u003d- 14A條） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 163K |
| 代理商： | IRH9250 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec10
12
Rads (Si)/sec
Min. Typ Max. Min.Typ. Max. Units
—
—
-160
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
-160 A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
-100
—
—
—
-800
—
—
—
0.5
-100
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ion/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
5
Parameter
Typ.
Units
Ion
BVDSS
-200
V
Ni
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.315
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -9A
μA
V
SD
—
-3.6
V
T
C
= 25°C, I
S
= -14A,V
GS
= 0V
Min.
Max.
International Rectifier Radiation Hardened HEXFETs are
tested to verify their hardness capability. The hardness
assurance program at International Rectifier uses two
radiation environments.
Every manufacturing lot is tested in a low dose rate (total
dose) environment per MlL-STD-750, test method 1019.
International Rectifier has imposed a standard gate voltage
of -12 volts per note 6 and a VDSS bias condition equal to
80% of the device rated voltage per note 7. Pre- and post-
radiation limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1. The values in
Table 1 will be met for either of the two low dose rate test
circuits that are used.
Radiation Performance of P-Channel Rad
Hard HEXFETs
Both pre- and post-radiation performance are tested and
specified using the same drive circuitry and test conditions
in order to provide a direct comparison. It should be noted
that at a radiation level of 1 x 10
5
Rads (Si), no change in
limits are specified in DC parameters.
High dose rate testing may be done on a special request
basis, using a dose rate up to 1 x 10
12
Rads (Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier P-
Channel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects environment
and the results are shown in Table 3.
IRH9250 Device
Radiation Characteristics
V
nA
Table 1. Low Dose Rate
IRH9250
100K Rads (Si)
Parameter
Units
Test Conditions
To Order
Next Data Sheet
Index
Previous Datasheet
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