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參數(shù)資料
| 型號： | IRHM4160 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| 中文描述： | 重復性雪崩和DV /受好評的HEXFET晶體管胸苷 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 266K |
| 代理商： | IRHM4160 |
"
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
C
=
C
+ C
oss
ds
gd
V
C
C
=
=
=
0V,
C
C
gd
f = 1MHz
+ C
gd ,
C SHORTED
GS
iss
rss
gs
C
iss
C
oss
C
rss
0
40
80
120
160
200
240
280
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
I =
35A
FOR TEST CIRCUIT
SEE FIGURE
13
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
1
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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|---|---|
| IRHM8160 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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|---|---|
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| IRHM450 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA |
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