參數(shù)資料
型號： ISL9K860P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 參考電壓二極管
英文描述： 8A, 600V Stealth⑩ Dual Diode
中文描述： 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 144K
代理商： ISL9K860P3
2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
I
Package Marking and Ordering Information
Electrical Characteristics (per leg)
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-220
Device Marking
K860P3
Device
ISL9K860P3
Package
TO-220AB
Tape Width
-
Quantity
-
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 600V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1.0
μ
A
mA
I
F
= 8A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.0
1.6
2.4
2.0
V
V
V
R
= 10V, I
F
= 0A
-
30
-
pF
I
F
= 1A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 8A, dI
F
/dt = 100A/
μ
s, V
R
= 30V
I
F
= 8A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
18
21
28
3.2
50
77
3.7
3.4
150
53
2.5
6.5
195
500
25
30
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Maximum di/dt during t
b
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
dI
M
/dt
I
F
= 8A,
dI
F
/dt = 200A/
μ
s,
V
R
= 390V,
T
C
= 125
°
C
A
nC
ns
I
F
= 8A,
dI
F
/dt = 600A/
μ
s,
V
R
= 390V,
T
C
= 125
°
C
A
nC
A/μs
-
-
-
-
-
1.75
62
°
C/W
°
C/W
相關(guān)PDF資料
PDF描述
ISL9N315AD3 N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs
ISL9N315AD3ST N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs
ISL9N7030BLP3 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
ISL9N7030BLS3ST 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
ISL9R1560G2 15A, 600V Stealth⑩ Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9K860P3_Q 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9N2357D3ST 功能描述:MOSFET 30V 35a NCh MOSFET 0.007 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N302AP3 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N302AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N302AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*