參數(shù)資料
型號： ISL9N315AD3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs
中文描述： 30 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： TO-252AA, 2 PIN
文件頁數(shù)： 1/11頁
文件大?。?/td> 238K
代理商： ISL9N315AD3ST
2003 Fairchild Semiconductor Corporation
February 2003
ISL9N315AD3/ISL9N315AD3ST Rev. A1
I
ISL9N315AD3 / ISL9N315AD3ST
N-Channel Logic Level PWM Optimized UltraFET
Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Formerly developmental type 83337
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.012
(Typ), V
GS
= 10V
r
DS(ON)
= 0.022
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 18nC, V
GS
= 5V
Q
gd
(Typ) = 3.4nC
C
ISS
(Typ) = 900pF
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 52
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
30
23
10
A
A
A
A
W
Figure 4
55
0.37
-55 to 175
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.73
100
52
o
C/W
o
C/W
o
C/W
Device Marking
N315AD
N315AD
Device
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
ISL9N315AD3ST
ISL9N315AD3
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
TO-252
DRAIN
(FLANGE)
GATE
SDRAIN
TO-251
相關(guān)PDF資料
PDF描述
ISL9N7030BLP3 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
ISL9N7030BLS3ST 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
ISL9R1560G2 15A, 600V Stealth⑩ Diode
ISL9R1560P2 15A, 600V Stealth⑩ Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N316AD3ST 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N316AP3 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N316AS3ST 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N318AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N322AD3ST 功能描述:MOSFET 30V 20a 0.022 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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