參數(shù)資料
型號(hào): ISL9N7030BLP3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
中文描述: 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 197K
代理商: ISL9N7030BLP3
2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
ISL9N7030BLP3, ISL9N7030BLS3ST
30V, 0.009 Ohm, 75A, N-Channel Logic
Level UltraFET Trench Power MOSFETs
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Packaging
ISL9N7030BLS3ST
JEDEC TO-263AB
Features
Fast Switching
r
DS(ON)
= 0.0064
(
Typ)
,
V
GS
=
10V
r
DS(ON)
= 0.010
(
Typ)
,
V
GS
=
4.5V
Q
g
Total 24nC
(
Typ), V
GS
= 5V
Q
gd
(
Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11nC
C
ISS
(
Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2600pF
Symbol
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive products.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
ISL9N7030BLP3
JEDEC TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURDRAIN
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N7030BLP3
TO-220AB
7030BL
ISL9N7030BLS3ST
TO-263AB (Tape and Reel)
7030BL
PWM
Optimized
D
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
V
DSS
V
DGR
V
GS
PARAMETER
ISL9N7030BLP3, ISL9N7030BLS3ST
30
30
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k
) (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
R
θ
JC
Thermal Resistance Junction to Case, TO-220, TO-263
R
θ
JA
Thermal Resistance Junction to Ambient, TO-220, TO-263
R
θ
JA
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
I
D
I
D
I
D
I
DM
P
D
75
48
15
Figure 4
100
0.67
-55 to 175
A
A
A
A
W
W/
o
C
o
C
T
J
, T
STG
T
L
T
pkg
300
260
o
C
o
C
1.5
62
43
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient, TO-263, 1in
2
copper pad area
Data Sheet
January2002
相關(guān)PDF資料
PDF描述
ISL9N7030BLS3ST 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
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ISL9R1560P2 15A, 600V Stealth⑩ Diode
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ISL9R1560G2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9R1560P2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel