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參數資料
| 型號： | ISL9N7030BLP3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs |
| 中文描述： | 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 4/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | ISL9N7030BLP3 |
2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
25
50
75
100
125
150
1
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
0
25
50
75
100
125
150
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 10V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
5
10
15
20
25
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
O
)
I
D
= 14A
I
D
= 75A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
I
D
= 50A
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 75A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
ISL9N7030BLP3, ISL9N7030BLS3ST
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| ISL9N7030BLS3ST | 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ISL9N7030BLS3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9R1560G2 | 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R1560G2_Q | 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R1560P2 | 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R1560P2_Q | 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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