參數(shù)資料
型號(hào): ISL9N7030BLS3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
中文描述: 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 5/10頁
文件大?。?/td> 197K
代理商: ISL9N7030BLS3ST
2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
100
1000
0.1
1
10
30
4000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
I
D
= 14A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 48A
V
DD
= 15V
0
50
100
150
200
250
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 15A
t
d(OFF)
t
r
t
d(ON)
t
f
0
50
100
150
200
250
300
350
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
r
t
d(ON)
t
f
V
GS
= 10V, V
DD
= 15V, I
D
= 15A
Test Circuits and Waveforms
FIGURE 15. GATE CHARGE TEST CIRCUIT
FIGURE 16. GATE CHARGE WAVEFORMS
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 1V
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
ISL9N7030BLP3, ISL9N7030BLS3ST
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