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參數(shù)資料
| 型號： | ISL9R18120S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 18A, 1200V Stealth⑩ Diode |
| 中文描述： | 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 161K |
| 代理商： | ISL9R18120S3S |
2002 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A
I
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25
°
C unless otherwise noted
Off State Characteristics
I
R
Instantaneous Reverse Current
On State Characteristics
V
F
Instantaneous Forward Voltage
Dynamic Characteristics
C
J
Junction Capacitance
Switching Characteristics
t
rr
Reverse Recovery Time
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
R
θ
JA
Thermal Resistance Junction to Ambient TO-247
R
θ
JA
Thermal Resistance Junction to Ambient TO-220, TO-263
Device Marking
R18120G2
R18120P2
R18120S3S
Device
Package
TO-247
TO-220AC
TO-263AB
Tape Width
N/A
N/A
24mm
Quantity
30
50
800
ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
R
= 1200V
T
C
= 25
°
C
T
C
= 125
°
C
-
-
-
-
100
1.0
μA
mA
I
F
= 18A
T
C
= 25
°
C
T
C
= 125
°
C
-
-
2.7
2.5
3.3
3.1
V
V
V
R
= 10V, I
F
= 0A
-
69
-
pF
I
F
= 1A, dI
F
/dt = 100A/μs, V
R
= 30V
I
F
= 18A, dI
F
/dt = 100A/μs, V
R
= 30V
I
F
= 18A,
dI
F
/dt = 200A/μs,
V
R
= 780V, T
C
= 25
°
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
38
60
300
6.5
950
400
7.0
8.0
2.0
235
5.2
22
2.1
370
45
70
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
μC
ns
-
A
μC
A/μs
t
rr
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
I
F
= 18A,
dI
F
/dt = 200A/μs,
V
R
= 780V,
T
C
= 125
°
C
I
F
= 18A,
dI
F
/dt = 1000A/μs,
V
R
= 780V,
T
C
= 125
°
C
TO-247, TO-220, TO-263
-
-
-
-
-
-
1.0
30
62
°
C/W
°
C/W
°
C/W
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| ISL9R460S3S | 4A, 600V Stealth⑩ Diode |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9R18120S3ST | 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R18120S3ST_Q | 功能描述:整流器 18A 1200V Stealt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R2480G2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL9R2480G2_S2611 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| ISL9R2480G2Q | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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