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參數(shù)資料
| 型號(hào)： | ISL9R8120S3S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 8A, 1200V Stealth⑩ Diode |
| 中文描述： | 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | ISL9R8120S3S |
2002 Fairchild Semiconductor Corporation
May 2002
I
ISL9R8120P2 / ISL9R8120S3S Rev. A
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth family exhibits low
reverse recovery current (I
RM(REC)
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 5.5
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 32ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Ratings
1200
1200
1200
8
16
100
71
20
-55 to 150
Units
V
V
V
A
A
A
W
mJ
°C
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 105
o
C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
°C
°C
JEDEC TO-220AC
ANODE
K
A
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
JEDEC TO-263AB
CATHODE
(FLANGE)
N / C
ANODE
Package
Symbol
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9R8120S3ST | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R8120S3ST_Q | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R860P2 | 功能描述:整流器 8a 600V Stealth Single RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9R860P2 | 制造商:Fairchild Semiconductor Corporation 功能描述:FAST RECOVERY POWER DIODE |
| ISL9R860P2_Q | 功能描述:整流器 8a 600V Stealth Single RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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