參數資料
型號: ISL9V2540S3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: EcoSPARK N-Channel Ignition IGBT
中文描述: 15.5 A, 430 V, N-CHANNEL IGBT, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數: 4/9頁
文件大?。?/td> 184K
代理商: ISL9V2540S3ST
2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
I
Typical Performance Curves
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
175
200
t
CLP
, TIME IN CLAMP (μS)
I
S
,
R
G
= 1K
, V
GE
= 5V,V
dd
= 14V
T
J
= 25
°
C
T
J
= 150
°
C
SCIS Curves valid for Vclamp Voltages of <430V
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
I
S
,
T
J
= 25
°
C
T
J
= 150
°
C
L, INDUCTANCE (mHy)
R
G
= 1K
, V
GE
= 5V,V
dd
= 14V
SCIS Curves valid for V
clamp
Voltages of <430V
1.25
1.30
1.35
1.40
1.45
1.50
1.55
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
°
C)
V
C
,
V
GE
= 4.0V
V
GE
= 3.5V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 10.0V
I
CE
= 6A
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
°
C)
V
C
,
I
CE
= 10A
V
GE
= 4.0V
V
GE
= 3.5V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 10.0V
0
5
10
15
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= - 40
°
C
V
GE
= 4.0V
V
GE
= 3.5V
V
GE
= 3.0V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 10.0V
0
5
10
15
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GE
= 4.0V
V
GE
= 3.5V
V
GE
= 3.0V
V
GE
= 4.5V
V
GE
= 5.0V
V
GE
= 10.0V
T
J
= 25
°
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
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