參數(shù)資料
型號： ISL9V3036D3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： KPSE 11C 11#16 PIN PLUG
中文描述： 21 A, 350 V, N-CHANNEL IGBT, TO-252AA
封裝： PLASTIC, DPAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 200K
代理商： ISL9V3036D3S
200
2
Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
I
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25
°
C unless otherwise noted
Off State Characteristics
BV
CER
Collector to Emitter Breakdown Voltage
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
t
d(ON)R
Current Turn-On Delay Time-Resistive
t
rR
Current Rise Time-Resistive
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
V3036D
V3036S
V3036P
Device
Package
TO-252AA
TO-263AB
TO-220AA
Tape Width
16mm
24mm
-
Quantity
2500
800
-
ISL9V3036D3S
ISL9V3036S3S
ISL9V3036P3
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 2mA, V
GE
= 0,
R
G
= 1K
,
See Fig. 15
T
J
= -40 to 150
°
C
I
C
= 10mA, V
GE
= 0,
R
G
= 0
,
See Fig. 15
T
J
= -40 to 150
°
C
I
C
= -75mA, V
GE
= 0V,
T
C
= 25
°
C
I
GES
= ± 2mA
V
CER
= 250V,
R
G
= 1K
,
See Fig. 11
V
EC
= 24V, See
Fig. 11
330
360
390
V
BV
CES
Collector to Emitter Breakdown Voltage
350
380
410
V
BV
ECS
Emitter to Collector Breakdown Voltage
30
-
-
V
BV
GES
I
CER
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
±12
-
-
±14
-
-
-
V
μA
mA
T
C
= 25
°
C
T
C
= 150
°
C
25
1
I
ECS
Emitter to Collector Leakage Current
T
C
= 25
°
C
T
C
= 150
°
C
-
-
-
-
-
1
40
-
26K
mA
mA
R
1
R
2
Series Gate Resistance
Gate to Emitter Resistance
70
-
10K
I
C
= 6A,
V
GE
= 4V
I
C
= 10A,
V
GE
= 4.5V
I
C
= 15A,
V
GE
= 4.5V
T
C
= 25
°
C,
See Fig. 3
T
C
= 150
°
C,
See Fig. 4
T
C
= 150
°
C
-
1.25
1.60
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
-
1.58
1.80
V
V
CE(SAT)
Collector to Emitter Saturation Voltage
-
1.90
2.20
V
I
C
= 10A, V
CE
= 12V,
V
GE
= 5V, See Fig. 14
I
C
= 1.0mA,
V
CE
= V
GE,
See Fig. 10
I
C
= 10A,
V
CE
= 12V
-
17
-
nC
V
GE(TH)
Gate to Emitter Threshold Voltage
T
C
= 25
°
C
T
C
= 150
°
C
1.3
0.75
-
-
2.2
1.8
V
V
V
GEP
Gate to Emitter Plateau Voltage
-
3.0
-
V
V
CE
= 14V, R
L
= 1
,
V
GE
= 5V, R
G
= 1K
T
J
= 25
°
C, See Fig. 12
V
CE
= 300V, R
L
= 500μH
,
V
GE
= 5V, R
G
= 1K
T
J
= 25
°
C, See Fig. 12
T
J
= 25
°
C, L = 3.0 mH,
R
G
= 1K
,
V
GE
= 5V, See
Fig. 1 & 2
-
-
0.7
2.1
4
7
μs
μs
t
d(OFF)L
t
fL
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
-
-
4.8
2.8
15
15
μs
μs
SCIS
Self Clamped Inductive Switching
-
-
300
mJ
TO-252, TO-263, TO-220
-
-
1.0
°
C/W
相關(guān)PDF資料
PDF描述
ISL9V3036P3 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9V3036D3ST 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 17a 360V Logic Level RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
ISL9V3036D3ST_R4970 制造商:Rochester Electronics LLC 功能描述:- Bulk
ISL9V3036P3 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
ISL9V3036S3S 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 Sgl N-Ch 360V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
ISL9V3036S3ST 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 17A 360V Logic Level RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
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