參數(shù)資料
型號: ISPLSI2032-110LT48I
廠商: Lattice Semiconductor Corporation
英文描述: In-System Programmable High Density PLD
中文描述: 在系統(tǒng)可編程高密度可編程邏輯器件
文件頁數(shù): 3/15頁
文件大?。?/td> 153K
代理商: ISPLSI2032-110LT48I
Specifications
ispLSI 2032/A
3
Absolute Maximum Ratings
1
Supply Voltage V
cc
...................................-0.5 to +7.0V
Input Voltage Applied........................ -2.5 to V
CC
+1.0V
Off-State Output Voltage Applied ..... -2.5 to V
CC
+1.0V
Storage Temperature................................ -65 to 150
°
C
Case Temp. with Power Applied .............. -55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied ... 150
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
T
A
= 0
°
C to + 70
°
C
T
A
= -40
°
C to + 85
°
C
SYMBOL
Table 2 - 0005/2032
V
CC
V
IL
V
IH
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
MIN.
MAX.
UNITS
4.75
4.5
2.0
0
5.25
5.5
V
cc
+1
0.8
V
V
V
V
Commercial
Industrial
Capacitance (T
A
=25
°
C, f=1.0 MHz)
C
C
C
SYMBOL
Table 2-0006/2032
PARAMETER
I/O Capacitance
Clock Capacitance
7
UNITS
pf
TYPICAL
6
TEST CONDITIONS
V = 5.0V, V = 2.0V
1
2
Dedicated Input Capacitance
pf
pf
V = 5.0V, V = 2.0V
V = 5.0V, V = 2.0V
10
3
Data Retention Specifications
Table 2-0008A-isp
PARAMETER
Data Retention
Erase/Reprogram Cycles
MINIMUM
20
10000
MAXIMUM
UNITS
Years
Cycles
相關(guān)PDF資料
PDF描述
ISPLSI2032-135LJ In-System Programmable High Density PLD
ISPLSI2032-135LJI In-System Programmable High Density PLD
ISPLSI2032-135LT44 In-System Programmable High Density PLD
ISPLSI2032-135LT44I In-System Programmable High Density PLD
ISPLSI2032-135LT48 In-System Programmable High Density PLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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